High-performance CoolSiC MOSFETs from Infineon, with a voltage of 1200V in a Q-DPAK package, offer increased power density for industrial applications.
Infineon Technologies AG has expanded its CoolSiC MOSFET technology to include Q-DPAK package options. This development offers significant benefits for electric vehicle (EV) chargers and demanding industrial applications.
Improved Thermal Performance
The CoolSiC MOSFETs 1200V G2 in Q-DPAK package feature top-side cooling (TSC), which allows more efficient heat dissipation directly from the device’s top surface to the heatsink. This cooling approach reduces thermal resistance by over 15% and lowers MOSFET temperature by about 11% compared to previous generations, supporting higher power density and more compact designs.
Reduced Switching Losses and Optimised Performance
The G2 generation delivers up to 25% lower switching losses for equivalent RDS(on) devices, leading to a system efficiency improvement of up to 0.1%. The RDS(on) range spans from 4 mΩ to 78 mΩ, enabling designers to optimise performance according to their needs.
Robustness and Reliability
These devices also support overload operation up to a high junction temperature of 200°C and demonstrate robustness against parasitic turn-on and hard commutation conditions, which is critical for reliability in dynamic and demanding environments like EV chargers, solar inverters, motor drives, and uninterruptible power supplies.
Flexible Configurations
The CoolSiC MOSFETs 1200V G2 are available in two Q-DPAK configurations—a single switch and a dual half-bridge—both integrated into Infineon’s X-DPAK top-side cooling platform. The Q-DPAK layout minimises parasitic inductance, enabling higher switching speeds and thus enhancing overall device performance.
Compact System Designs and Simplified Manufacturing
The small footprint of the Q-DPAK package supports compact system designs, while its compatibility with automated assembly processes simplifies manufacturing.
Availability
The CoolSiC MOSFET 1200 V G2 Q-DPAK package variants are available now. For more information about the CoolSiC MOSFET discretes, visit www.infineon.com/coolsic-mosfet-discretes.
The expansion of Infineon Technologies AG's CoolSiC MOSFET technology includes Q-DPAK package options, benefiting not only electric vehicle (EV) chargers but also various industries with demanding finance and technology requirements. With improved thermal performance due to top-side cooling, these CoolSiC MOSFETs offer higher power density and more compact designs, reducing switching losses and optimizing performance for applications such as EV chargers and solar inverters.
